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Carbon‐Nanotube‐Confined Vertical Heterostructures with Asymmetric Contacts
Author(s) -
Zhang Jin,
Zhang Kenan,
Xia Bingyu,
Wei Yang,
Li Dongqi,
Zhang Ke,
Zhang Zhixing,
Wu Yang,
Liu Peng,
Duan Xidong,
Xu Yong,
Duan Wenhui,
Fan Shoushan,
Jiang Kaili
Publication year - 2017
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201702942
Subject(s) - heterojunction , materials science , nanoelectronics , carbon nanotube , nanotechnology , optoelectronics , van der waals force , semiconductor , nanomaterials , stacking , carbon nanotube field effect transistor , transistor , nanotube , field effect transistor , voltage , electrical engineering , physics , engineering , nuclear magnetic resonance , quantum mechanics , molecule
Van der Waals (vdW) heterostructures have received intense attention for their efficient stacking methodology with 2D nanomaterials in vertical dimension. However, it is still a challenge to scale down the lateral size of vdW heterostructures to the nanometer and make proper contacts to achieve optimized performances. Here, a carbon‐nanotube‐confined vertical heterostructure (CCVH) is employed to address this challenge, in which 2D semiconductors are asymmetrically sandwiched by an individual metallic single‐walled carbon nanotube (SWCNT) and a metal electrode. By using WSe 2 and MoS 2 , the CCVH can be made into p‐type and n‐type field effect transistors with high on/off ratios even when the channel length is 3.3 nm. A complementary inverter was further built with them, indicating their potential in logic circuits with a high integration level. Furthermore, the Fermi level of SWCNTs can be efficiently modulated by the gate voltage, making it competent for both electron and hole injection in the CCVHs. This unique property is shown by the transition of WSe 2 CCVH from unipolar to bipolar, and the transition of WSe 2 /MoS 2 from p–n junction to n–n junction under proper source–drain biases and gate voltages. Therefore, the CCVH, as a member of 1D/2D mixed heterostructures, shows great potentials in future nanoelectronics and nano‐optoelectronics.