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Dithiopheneindenofluorene ( TIF ) Semiconducting Polymers with Very High Mobility in Field‐Effect Transistors
Author(s) -
Chen Hu,
Hurhangee Michael,
Nikolka Mark,
Zhang Weimin,
Kirkus Mindaugas,
Neophytou Marios,
Cryer Samuel J.,
Harkin David,
Hayoz Pascal,
AbdiJalebi Mojtaba,
McNeill Christopher R.,
Sirringhaus Henning,
McCulloch Iain
Publication year - 2017
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201702523
Subject(s) - materials science , polymer , electron mobility , copolymer , transistor , thin film transistor , optoelectronics , field effect transistor , charge carrier , thin film , polymer chemistry , nanotechnology , composite material , electrical engineering , voltage , layer (electronics) , engineering
The charge‐carrier mobility of organic semiconducting polymers is known to be enhanced when the energetic disorder of the polymer is minimized. Fused, planar aromatic ring structures contribute to reducing the polymer conformational disorder, as demonstrated by polymers containing the indacenodithiophene ( IDT ) repeat unit, which have both a low Urbach energy and a high mobility in thin‐film‐transistor (TFT) devices. Expanding on this design motif, copolymers containing the dithiopheneindenofluorene repeat unit are synthesized, which extends the fused aromatic structure with two additional phenyl rings, further rigidifying the polymer backbone. A range of copolymers are prepared and their electrical properties and thin‐film morphology evaluated, with the co ‐benzothiadiazole polymer having a twofold increase in hole mobility when compared to the IDT analog, reaching values of almost 3 cm 2 V −1 s −1 in bottom‐gate top‐contact organic field‐effect transistors.