Graphene‐Contacted Ultrashort Channel Monolayer MoS 2  Transistors | Zendy

Xie Li | Zendy; Liao Mengzhou | Zendy; Wang Shuopei | Zendy; Yu Hua | Zendy; Du Luojun | Zendy; Tang Jian | Zendy; Zhao Jing | Zendy; Zhang Jing | Zendy; Chen Peng | Zendy; Lu Xiaobo | Zendy; Wang Guole | Zendy; Xie Guibai | Zendy; Yang Rong | Zendy; Shi Dongxia | Zendy; Zhang Guangyu | Zendy

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Graphene‐Contacted Ultrashort Channel Monolayer MoS 2 Transistors

Author(s) -

Xie Li,

Liao Mengzhou,

Wang Shuopei,

Yu Hua,

Du Luojun,

Tang Jian,

Zhao Jing,

Zhang Jing,

Chen Peng,

Lu Xiaobo,

Wang Guole,

Xie Guibai,

Yang Rong,

Shi Dongxia,

Zhang Guangyu

Publication year - 2017

Publication title -

advanced materials

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 10.707

H-Index - 527

eISSN - 1521-4095

pISSN - 0935-9648

DOI - 10.1002/adma.201702522

Subject(s) - materials science , graphene , monolayer , ohmic contact , optoelectronics , nanotechnology , transistor , semiconductor , field effect transistor , fabrication , electronics , electrical engineering , voltage , medicine , alternative medicine , engineering , layer (electronics) , pathology

2D semiconductors are promising channel materials for field‐effect transistors (FETs) with potentially strong immunity to short‐channel effects (SCEs). In this paper, a grain boundary widening technique is developed to fabricate graphene electrodes for contacting monolayer MoS 2 . FETs with channel lengths scaling down to ≈4 nm can be realized reliably. These graphene‐contacted ultrashort channel MoS 2 FETs exhibit superior performances including the nearly Ohmic contacts and excellent immunity to SCEs. This work provides a facile route toward the fabrication of various 2D material‐based devices for ultrascaled electronics.

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