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Quaternary 2D Transition Metal Dichalcogenides (TMDs) with Tunable Bandgap
Author(s) -
Susarla Sandhya,
Kutana Alex,
Hachtel Jordan A.,
Kochat Vidya,
Apte Amey,
Vajtai Robert,
Idrobo Juan Carlos,
Yakobson Boris I.,
Tiwary Chandra Sekhar,
Ajayan Pulickel M.
Publication year - 2017
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201702457
Subject(s) - materials science , band gap , chemical vapor deposition , doping , transition metal , flexibility (engineering) , optoelectronics , wide bandgap semiconductor , nanotechnology , catalysis , biochemistry , chemistry , statistics , mathematics
Alloying/doping in 2D material is important due to wide range bandgap tunability. Increasing the number of components would increase the degree of freedom which can provide more flexibility in tuning the bandgap and also reduces the growth temperature. Here, synthesis of quaternary alloys Mo x W 1− x S 2 y Se 2(1− y ) is reported using chemical vapor deposition. The composition of alloys is tuned by changing the growth temperatures. As a result, the bandgap can be tuned which varies from 1.61 to 1.85 eV. The detailed theoretical calculation supports the experimental observation and shows a possibility of wide tunability of bandgap.