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Nonvolatile Perovskite‐Based Photomemory with a Multilevel Memory Behavior
Author(s) -
Chen JungYao,
Chiu YuCheng,
Li YenTing,
Chueh ChuChen,
Chen WenChang
Publication year - 2017
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201702217
Subject(s) - perovskite (structure) , materials science , optoelectronics , non volatile memory , nanoparticle , nanotechnology , electronic circuit , electrical engineering , chemical engineering , engineering
Solution‐processable organic–inorganic hybrid perovskite materials with a wealth of exotic semiconducting properties have appeared as the promising front‐runners for next‐generation electronic devices. Further, regarding its well photoresponsibility, various perovskite‐based photosensing devices are prosperously developed in recent years. However, most exploited devices to date only transiently transduce the optical signals into electrical circuits while under illumination, which necessitates using additional converters to further store the output signals for recording the occurrence of light stimulation. Herein, a nonvolatile perovskite‐based floating‐gate photomemory with a multilevel memory behavior is demonstrated, for which a floating gate comprising a polymer matrix impregnated with perovskite nanoparticles is employed. Owing to the well photoresponsibility introduced by the embedded nanoparticles, the device is enabled to access multiple wavelength response and the functionalities of recording power/time‐dependent illumination under no vertical electrical field. Intriguingly, a nonvolatility of photorecording exceeding three months with a high On/Off current ratio over 10 4 can be achieved.