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An All‐Solution‐Based Hybrid CMOS‐Like Quantum Dot/Carbon Nanotube Inverter
Author(s) -
Shulga Artem G.,
Derenskyi Vladimir,
SalazarRios Jorge Mario,
Dirin Dmitry N.,
Fritsch Martin,
Kovalenko Maksym V.,
Scherf Ullrich,
Loi Maria A.
Publication year - 2017
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201701764
Subject(s) - materials science , carbon nanotube , quantum dot , inverter , cmos , nanotechnology , transistor , optoelectronics , semiconductor , fabrication , field effect transistor , substrate (aquarium) , electrical engineering , voltage , medicine , alternative medicine , pathology , engineering , oceanography , geology
The development of low‐cost, flexible electronic devices is subordinated to the advancement in solution‐based and low‐temperature‐processable semiconducting materials, such as colloidal quantum dots (QDs) and single‐walled carbon nanotubes (SWCNTs). Here, excellent compatibility of QDs and SWCNTs as a complementary pair of semiconducting materials for fabrication of high‐performance complementary metal‐oxide‐semiconductor (CMOS)‐like inverters is demonstrated. The n‐type field effect transistors (FETs) based on I − capped PbS QDs ( V th = 0.2 V, on/off = 10 5 , S S‐th = 114 mV dec −1 , µ e = 0.22 cm 2 V −1 s −1 ) and the p‐type FETs with tailored parameters based on low‐density random network of SWCNTs ( V th = −0.2 V, on/off > 10 5 , S S‐th = 63 mV dec −1 , µ h = 0.04 cm 2 V −1 s −1 ) are integrated on the same substrate in order to obtain high‐performance hybrid inverters. The inverters operate in the sub‐1 V range (0.9 V) and have high gain (76 V/V), large maximum‐equal‐criteria noise margins (80%), and peak power consumption of 3 nW, in combination with low hysteresis (10 mV).