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Single Atomically Sharp Lateral Monolayer p‐n Heterojunction Solar Cells with Extraordinarily High Power Conversion Efficiency
Author(s) -
Tsai MengLin,
Li MingYang,
Retamal José Ramón Durán,
Lam KaiTak,
Lin YungChang,
Suenaga Kazu,
Chen LihJuann,
Liang Gengchiau,
Li LainJong,
He JrHau
Publication year - 2017
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201701168
Subject(s) - heterojunction , materials science , monolayer , optoelectronics , photovoltaics , photovoltaic system , energy conversion efficiency , semiconductor , limiting , electrode , alloy , nanotechnology , electrical engineering , composite material , chemistry , mechanical engineering , engineering
The recent development of 2D monolayer lateral semiconductor has created new paradigm to develop p‐n heterojunctions. Albeit, the growth methods of these heterostructures typically result in alloy structures at the interface, limiting the development for high‐efficiency photovoltaic (PV) devices. Here, the PV properties of sequentially grown alloy‐free 2D monolayer WSe 2 ‐MoS 2 lateral p‐n heterojunction are explores. The PV devices show an extraordinary power conversion efficiency of 2.56% under AM 1.5G illumination. The large surface active area enables the full exposure of the depletion region, leading to excellent omnidirectional light harvesting characteristic with only 5% reduction of efficiency at incident angles up to 75°. Modeling studies demonstrate the PV devices comply with typical principles, increasing the feasibility for further development. Furthermore, the appropriate electrode‐spacing design can lead to environment‐independent PV properties. These robust PV properties deriving from the atomically sharp lateral p‐n interface can help develop the next‐generation photovoltaics.