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A Strategy to Design High‐Density Nanoscale Devices utilizing Vapor Deposition of Metal Halide Perovskite Materials
Author(s) -
Hwang Bohee,
Lee JangSik
Publication year - 2017
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201701048
Subject(s) - materials science , perovskite (structure) , resistive random access memory , non volatile memory , optoelectronics , chemical vapor deposition , halide , nanotechnology , nanoscopic scale , deposition (geology) , atomic layer deposition , wafer , thin film , voltage , electrical engineering , chemical engineering , inorganic chemistry , paleontology , chemistry , sediment , engineering , biology
The demand for high memory density has increased due to increasing needs of information storage, such as big data processing and the Internet of Things. Organic–inorganic perovskite materials that show nonvolatile resistive switching memory properties have potential applications as the resistive switching layer for next‐generation memory devices, but, for practical applications, these materials should be utilized in high‐density data‐storage devices. Here, nanoscale memory devices are fabricated by sequential vapor deposition of organolead halide perovskite (OHP) CH 3 NH 3 PbI 3 layers on wafers perforated with 250 nm via‐holes. These devices have bipolar resistive switching properties, and show low‐voltage operation, fast switching speed (200 ns), good endurance, and data‐retention time >10 5 s. Moreover, the use of sequential vapor deposition is extended to deposit CH 3 NH 3 PbI 3 as the memory element in a cross‐point array structure. This method to fabricate high‐density memory devices could be used for memory cells that occupy large areas, and to overcome the scaling limit of existing methods; it also presents a way to use OHPs to increase memory storage capacity.