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Ultrafast Growth of High‐Quality Monolayer WSe 2 on Au
Author(s) -
Gao Yang,
Hong YiLun,
Yin LiChang,
Wu Zhangting,
Yang Zhiqing,
Chen MaoLin,
Liu Zhibo,
Ma Teng,
Sun DongMing,
Ni Zhenhua,
Ma XiuLiang,
Cheng HuiMing,
Ren Wencai
Publication year - 2017
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201700990
Subject(s) - materials science , monolayer , ultrashort pulse , chemical vapor deposition , substrate (aquarium) , nonmetal , crystal growth , nanotechnology , crystal (programming language) , analytical chemistry (journal) , optoelectronics , crystallography , metal , optics , chemistry , organic chemistry , metallurgy , laser , programming language , oceanography , physics , geology , computer science
The ultrafast growth of high‐quality uniform monolayer WSe 2 is reported with a growth rate of ≈26 µm s −1 by chemical vapor deposition on reusable Au substrate, which is ≈2–3 orders of magnitude faster than those of most 2D transition metal dichalcogenides grown on nonmetal substrates. Such ultrafast growth allows for the fabrication of millimeter‐size single‐crystal WSe 2 domains in ≈30 s and large‐area continuous films in ≈60 s. Importantly, the ultrafast grown WSe 2 shows excellent crystal quality and extraordinary electrical performance comparable to those of the mechanically exfoliated samples, with a high mobility up to ≈143 cm 2 V −1 s −1 and ON/OFF ratio up to 9 × 10 6 at room temperature. Density functional theory calculations reveal that the ultrafast growth of WSe 2 is due to the small energy barriers and exothermic characteristic for the diffusion and attachment of W and Se on the edges of WSe 2 on Au substrate.