Ultrafast Growth of High‐Quality Monolayer WSe 2 on Au

The ultrafast growth of high‐quality uniform monolayer WSe 2 is reported with a growth rate of ≈26 µm s −1 by chemical vapor deposition on reusable Au substrate, which is ≈2–3 orders of magnitude faster than those of most 2D transition metal dichalcogenides grown on nonmetal substrates. Such ultrafast growth allows for the fabrication of millimeter‐size single‐crystal WSe 2 domains in ≈30 s and large‐area continuous films in ≈60 s. Importantly, the ultrafast grown WSe 2 shows excellent crystal quality and extraordinary electrical performance comparable to those of the mechanically exfoliated samples, with a high mobility up to ≈143 cm 2 V −1 s −1 and ON/OFF ratio up to 9 × 10 6 at room temperature. Density functional theory calculations reveal that the ultrafast growth of WSe 2 is due to the small energy barriers and exothermic characteristic for the diffusion and attachment of W and Se on the edges of WSe 2 on Au substrate.