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Brain‐Inspired Photonic Neuromorphic Devices using Photodynamic Amorphous Oxide Semiconductors and their Persistent Photoconductivity
Author(s) -
Lee Minkyung,
Lee Woobin,
Choi Seungbeom,
Jo JeongWan,
Kim Jaekyun,
Park Sung Kyu,
Kim YongHoon
Publication year - 2017
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201700951
Subject(s) - neuromorphic engineering , materials science , photonics , optoelectronics , photoconductivity , semiconductor , neural facilitation , artificial neural network , nanotechnology , computer science , synaptic plasticity , artificial intelligence , chemistry , biochemistry , receptor
The combination of a neuromorphic architecture and photonic computing may open up a new era for computational systems owing to the possibility of attaining high bandwidths and the low‐computation‐power requirements. Here, the demonstration of photonic neuromorphic devices based on amorphous oxide semiconductors (AOSs) that mimic major synaptic functions, such as short‐term memory/long‐term memory, spike‐timing‐dependent plasticity, and neural facilitation, is reported. The synaptic functions are successfully emulated using the inherent persistent photoconductivity (PPC) characteristic of AOSs. Systematic analysis of the dynamics of photogenerated carriers for various AOSs is carried out to understand the fundamental mechanisms underlying the photoinduced carrier‐generation and relaxation behaviors, and to search for a proper channel material for photonic neuromorphic devices. It is found that the activation energy for the neutralization of ionized oxygen vacancies has a significant influence on the photocarrier‐generation and time‐variant recovery behaviors of AOSs, affecting the PPC behavior.