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Chemical Vapor Deposition of Bernal‐Stacked Graphene on a Cu Surface by Breaking the Carbon Solubility Symmetry in Cu Foils
Author(s) -
Yoo Min Seok,
Lee Hyo Chan,
Lee Siyoung,
Lee Seon Baek,
Lee NamSuk,
Cho Kilwon
Publication year - 2017
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201700753
Subject(s) - materials science , graphene , chemical vapor deposition , foil method , carbon fibers , nanotechnology , sheet resistance , thin film , doping , chemical engineering , optoelectronics , layer (electronics) , composite material , composite number , engineering
The synthesis of Bernal‐stacked multilayer graphene over large areas is intensively investigated due to the value of this material's tunable electronic structure, which makes it promising for use in a wide range of optoelectronic applications. Multilayer graphene is typically formed via chemical vapor deposition onto a metal catalyst, such as Ni, a Cu–Ni alloy, or a Cu pocket. These methods, however, require sophisticated control over the process parameters, which limits the process reproducibility and reliability. Here, a new synthetic method for the facile growth of large‐area Bernal‐stacked multilayer graphene with precise layer control is proposed. A thin Ni film is deposited onto the back side of a Cu foil to induce controlled diffusion of carbon atoms through bulk Cu from the back to the front. The resulting multilayer graphene exhibits a 97% uniformity and a sheet resistance of 50 Ω sq −1 with a 90% transmittance after doping. The growth mechanism is elucidated and a generalized kinetic model is developed to describe Bernal‐stacked multilayer graphene growth by the carbon atoms diffused through bulk Cu.