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Few‐Layer Black Phosphorus Carbide Field‐Effect Transistor via Carbon Doping
Author(s) -
Tan Wee Chong,
Cai Yongqing,
Ng Rui Jie,
Huang Li,
Feng Xuewei,
Zhang Gang,
Zhang YongWei,
Nijhuis Christian A.,
Liu Xinke,
Ang KahWee
Publication year - 2017
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201700503
Subject(s) - materials science , phosphide , carbon black , doping , electron mobility , semiconductor , carbide , optoelectronics , alloy , silicon carbide , nickel , composite material , metallurgy , natural rubber
Black phosphorus carbide (b‐PC) is a new family of layered semiconducting material that has recently been predicted to have the lightest electrons and holes among all known 2D semiconductors, yielding a p‐type mobility (≈10 5 cm 2 V −1 s −1 ) at room temperature that is approximately five times larger than the maximum value in black phosphorus. Here, a high‐performance composite few‐layer b‐PC field‐effect transistor fabricated via a novel carbon doping technique which achieved a high hole mobility of 1995 cm 2 V −1 s −1 at room temperature is reported. The absorption spectrum of this material covers an electromagnetic spectrum in the infrared regime not served by black phosphorus and is useful for range finding applications as the earth atmosphere has good transparency in this spectral range. Additionally, a low contact resistance of 289 Ω µm is achieved using a nickel phosphide alloy contact with an edge contacted interface via sputtering and thermal treatment.