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Ultrafast Solar‐Blind Ultraviolet Detection by Inorganic Perovskite CsPbX 3 Quantum Dots Radial Junction Architecture
Author(s) -
Lu Jiawen,
Sheng Xuexi,
Tong Guoqing,
Yu Zhongwei,
Sun Xiaolin,
Yu Linwei,
Xu Xiangxing,
Wang Junzhuan,
Xu Jun,
Shi Yi,
Chen Kunji
Publication year - 2017
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201700400
Subject(s) - materials science , photodetection , responsivity , optoelectronics , ultraviolet , perovskite (structure) , nanowire , ultrashort pulse , quantum dot , quantum efficiency , photovoltaic system , nanotechnology , photodetector , optics , physics , laser , chemical engineering , engineering , ecology , biology
Inorganic CsPbX 3 (X = Cl, Br, I, or hybrid among them) perovskite quantum dots (IPQDs) are promising building blocks for exploring high performance optoelectronic applications. In this work, the authors report a new hybrid structure that marries CsPbX 3 IPQDs to silicon nanowires (SiNWs) radial junction structures to achieve ultrafast and highly sensitive ultraviolet (UV) detection in solar‐blind spectrum. A compact and uniform deployment of CsPbX 3 IPQDs upon the sidewall of low‐reflective 3D radial junctions enables a strong light field excitation and efficient down‐conversion of the ultraviolet incidences, which are directly tailored into emission bands optimized for a rapid photodetection in surrounding ultrathin radial p‐i‐n junctions. A fast solar‐blind UV detection has been demonstrated in this hybrid IPQD‐NW detectors, with rise/fall response time scales of 0.48/1.03 ms and a high responsivity of 54 mA W −1 @200 nm (or 32 mA W −1 @270 nm), without the need of any external power supply. These results pave the way toward large area manufacturing of high performance Si‐based perovskite UV detectors in a scalable and low‐cost procedure.