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Quantum Conductance Probing of Oxygen Vacancies in SrTiO 3 Epitaxial Thin Film using Graphene
Author(s) -
Kang Kyeong Tae,
Kang Haeyong,
Park Jeongmin,
Suh Dongseok,
Choi Woo Seok
Publication year - 2017
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201700071
Subject(s) - materials science , graphene , conductance , epitaxy , oxygen , thin film , condensed matter physics , nanotechnology , chemical physics , quantum mechanics , layer (electronics) , physics
Quantum Hall conductance in monolayer graphene on an epitaxial SrTiO 3 (STO) thin film is studied to understand the role of oxygen vacancies in determining the dielectric properties of STO. As the gate‐voltage sweep range is gradually increased in the device, systematic generation and annihilation of oxygen vacancies, evidenced from the hysteretic conductance behavior in the graphene, are observed. Furthermore, based on the experimentally observed linear scaling relation between the effective capacitance and the voltage sweep range, a simple model is constructed to manifest the relationship among the dielectric properties of STO with oxygen vacancies. The inherent quantum Hall conductance in graphene can be considered as a sensitive, robust, and noninvasive probe for understanding the electronic and ionic phenomena in complex transition‐metal oxides without impairing the oxide layer underneath.