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Memory Devices: Eliminating Negative‐SET Behavior by Suppressing Nanofilament Overgrowth in Cation‐Based Memory (Adv. Mater. 48/2016)
Author(s) -
Liu Sen,
Lu Nianduan,
Zhao Xiaolong,
Xu Hui,
Banerjee Writam,
Lv Hangbing,
Long Shibing,
Li Qingjiang,
Liu Qi,
Liu Ming
Publication year - 2016
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201670340
Subject(s) - materials science , graphene , protein filament , layer (electronics) , resistive random access memory , optoelectronics , resistive touchscreen , set (abstract data type) , ion , nanotechnology , electrode , composite material , computer science , physics , computer vision , programming language , quantum mechanics
On page 10623, Q. Liu, M. Liu and co‐workers have demonstrated that the negative‐SET behavior, which can cause reset failure, is related to the conductive filament overgrowth phenomenon in cation‐based resistive switching memory. In addition, they propose an effective solution (inserting an ion/atom‐blocking layer, i.e. graphene) to eliminate the negative‐SET phenomenon fundamentally. The fabricated graphene‐based device shows good and stable resistive switching performances.