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Photoluminescence: Inorganic Double Helices in Semiconducting SnIP (Adv. Mater. 44/2016)
Author(s) -
Pfister Daniela,
Schäfer Konrad,
Ott Claudia,
Gerke Birgit,
Pöttgen Rainer,
Janka Oliver,
Baumgartner Maximilian,
Efimova Anastasia,
Hohmann Andrea,
Schmidt Peer,
Venkatachalam Sabarinathan,
van Wüllen Leo,
Schürmann Ulrich,
Kienle Lorenz,
Duppel Viola,
Parzinger Eric,
Miller Bastian,
Becker Jonathan,
Holleitner Alexander,
Weihrich Richard,
Nilges Tom
Publication year - 2016
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201670310
Subject(s) - photoluminescence , materials science , semiconductor , helix (gastropod) , rod , thermal stability , flexibility (engineering) , nanotechnology , crystallography , optoelectronics , chemical engineering , chemistry , medicine , ecology , statistics , alternative medicine , mathematics , pathology , snail , engineering , biology
SnIP, a 1.8 eV semiconductor, adopts one on the most prominent structures, a double helix, as shown on page 9783 by T. Nilges and co‐workers. The compound is the first ever made atomic‐scale inorganic double helix, featuring high mechanical flexibility, photoluminescence and thermal stability. As‐prepared crystals of SnIP can be mechanically and chemically delaminated to 5 nm rods within minutes.