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Silica: Nanoscale Transformations in Metastable, Amorphous, Silicon‐Rich Silica (Adv. Mater. 34/2016)
Author(s) -
Mehonic Adnan,
Buckwell Mark,
Montesi Luca,
Munde Manveer Singh,
Gao David,
Hudziak Stephen,
Chater Richard J.,
Fearn Sarah,
McPhail David,
Bosman Michel,
Shluger Alexander L.,
Kenyon Anthony J.
Publication year - 2016
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201670241
Subject(s) - materials science , metastability , amorphous solid , nanoscopic scale , biasing , silicon , oxide , amorphous silicon , nanotechnology , amorphous silica , ion , silicon oxide , crystalline silicon , chemical engineering , optoelectronics , voltage , crystallography , metallurgy , organic chemistry , electrical engineering , chemistry , silicon nitride , engineering
Electrically biasing thin films of amorphous, substoichiometric silicon oxide drives surprisingly large structural changes, apparent as density variations, oxygen movement, and, ultimately, emission of superoxide ions. The results from the fundamental study by A. Mehonic, A. J. Kenyon, and co‐workers reported on page 7486 are directly relevant to materials that are increasingly used in a range of technologies, and demonstrate a surprising level of field‐driven local reordering of a random oxide network.