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Field‐Effect Transistors: Ultrathin MXene‐Micropattern‐Based Field‐Effect Transistor for Probing Neural Activity (Adv. Mater. 17/2016)
Author(s) -
Xu Bingzhe,
Zhu Minshen,
Zhang Wencong,
Zhen Xu,
Pei Zengxia,
Xue Qi,
Zhi Chunyi,
Shi Peng
Publication year - 2016
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201670119
Subject(s) - materials science , microcontact printing , field effect transistor , transistor , nanotechnology , fabrication , optoelectronics , transistor array , electrical engineering , cmos , medicine , alternative medicine , engineering , pathology , voltage , amplifier
A field‐effect transistor (FET) based on ultrathin Ti 3 C 2 –MXene micropatterns is developed by C. Zhi, P. Shi, and co‐workers, as described on page 3333. The FET can be utilized for label‐free probing of small molecules in typical biological environments, e.g., for fast detection of action potentials in primary neurons. This device is produced with a microcontact printing technique, harnessing the unique advantages for easy fabrication.