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Memristors: Direct Observation of Localized Radial Oxygen Migration in Functioning Tantalum Oxide Memristors (Adv. Mater. 14/2016)
Author(s) -
Kumar Suhas,
Graves Catherine E.,
Strachan John Paul,
Grafals Emmanuelle Merced,
Kilcoyne Arthur L. David,
Tyliszczak Tolek,
Weker Johanelson,
Nishi Yoshio,
Williams R. Stanley
Publication year - 2016
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201670096
Subject(s) - resistive random access memory , tantalum , materials science , memristor , oxide , nanoscopic scale , nanotechnology , optoelectronics , oxygen , transmission (telecommunications) , computer science , electrical engineering , metallurgy , telecommunications , chemistry , engineering , organic chemistry , voltage
As information bits of 0's and 1's are stored in crosspoint tantalum oxide memristors, or resistive random access memory (RRAM) cells, nanoscale‐resolution in operando X‐ray transmission spectromicroscopy is used by J. P. Strachan and co‐workers, as reported on page 2772, to directly observe oxygen migration and clustering, revealing an important operation and failure mechanism of RRAM, a frontrunner technology for next‐generation computer memory.