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Photocurrent Generation: Highly Efficient Photocurrent Generation from Nanocrystalline Graphene–Molybdenum Disulfide Lateral Interfaces (Adv. Mater. 9/2016)
Author(s) -
Lee Kang Hyuck,
Kim TaeHo,
Shin HyunJin,
Kim SangWoo
Publication year - 2016
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201670061
Subject(s) - graphene , materials science , nanocrystalline material , molybdenum disulfide , photocurrent , monolayer , optoelectronics , schottky barrier , schottky diode , nanotechnology , diode , composite material
On page 1793, S.‐W. Kim and co‐workers report that nanocrystalline graphene–MoS 2 lateral interfaces reveal distinct current‐rectified characteristics, similar to a p–n diode, that are seldom observed for the monolayer graphene–MoS 2 vertical interface. The lateral interfaces increase the Schottky barrier between the graphene and the MoS 2 because the metallic MoS 2 edges cause charge reordering and a potential shift in the graphene.
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