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Nanowires: Simple, Inexpensive, and Rapid Approach to Fabricate Cross‐Shaped Memristors Using an Inorganic‐Nanowire‐Digital‐Alignment Technique and a One‐Step Reduction Process (Adv. Mater. 3/2016)
Author(s) -
Xu Wentao,
Lee Yeongjun,
Min SungYong,
Park Cheolmin,
Lee TaeWoo
Publication year - 2016
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201670020
Subject(s) - nanowire , materials science , fabrication , memristor , nanotechnology , layer (electronics) , perpendicular , electrical conductor , polymer , optoelectronics , composite material , electronic engineering , medicine , alternative medicine , geometry , mathematics , pathology , engineering
An inorganic‐nanowire digital‐alignment technique for the easy fabrication of large‐area aligned Cu nanowire‐based memristor arrays is described by T.‐W. Lee and co‐workers on page 527. This technique digitally prints cross‐shaped, arbitrarily long, continuous Cu precursor‐blended polymer nanowires, and then converts the structure into two‐dimensional arrays of perpendicularly aligned, individually conductive Cu‐NWs with a nano‐meter‐scale Cu x O layer sandwiched at each cross point.