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Transistors: Realization of Room‐Temperature Phonon‐Limited Carrier Transport in Monolayer MoS 2 by Dielectric and Carrier Screening (Adv. Mater. 3/2016)
Author(s) -
Yu Zhihao,
Ong ZhunYong,
Pan Yiming,
Cui Yang,
Xin Run,
Shi Yi,
Wang Baigeng,
Wu Yun,
Chen Tangsheng,
Zhang YongWei,
Zhang Gang,
Wang Xinran
Publication year - 2016
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201670019
Subject(s) - monolayer , materials science , dielectric , phonon , electron mobility , substrate (aquarium) , transistor , optoelectronics , impurity , condensed matter physics , nanotechnology , electrical engineering , physics , oceanography , engineering , quantum mechanics , voltage , geology
On page 547, charged impurities in monolayer MoS 2 are effectively screened by combining a high‐κ dielectric substrate and a high density of carriers, leading to an unprecedented room‐temperature electron mobility of ≈150 cm 2 V −1 s −1 . Y. Shi, G. Zhang, X. Wang and co‐workers also demonstrate phonon‐limited transport in monolayer MoS 2 for the first time, an important milestone for electronic device applications.