Transistors: Realization of Room‐Temperature Phonon‐Limited Carrier Transport in Monolayer MoS 2  by Dielectric and Carrier Screening (Adv. Mater. 3/2016) | Zendy

Yu Zhihao | Zendy; Ong ZhunYong | Zendy; Pan Yiming | Zendy; Cui Yang | Zendy; Xin Run | Zendy; Shi Yi | Zendy; Wang Baigeng | Zendy; Wu Yun | Zendy; Chen Tangsheng | Zendy; Zhang YongWei | Zendy; Zhang Gang | Zendy; Wang Xinran | Zendy

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Transistors: Realization of Room‐Temperature Phonon‐Limited Carrier Transport in Monolayer MoS 2 by Dielectric and Carrier Screening (Adv. Mater. 3/2016)

Author(s) -

Yu Zhihao,

Ong ZhunYong,

Pan Yiming,

Cui Yang,

Xin Run,

Shi Yi,

Wang Baigeng,

Wu Yun,

Chen Tangsheng,

Zhang YongWei,

Zhang Gang,

Wang Xinran

Publication year - 2016

Publication title -

advanced materials

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 10.707

H-Index - 527

eISSN - 1521-4095

pISSN - 0935-9648

DOI - 10.1002/adma.201670019

Subject(s) - monolayer , materials science , dielectric , phonon , electron mobility , substrate (aquarium) , transistor , optoelectronics , impurity , condensed matter physics , nanotechnology , electrical engineering , physics , oceanography , engineering , quantum mechanics , voltage , geology

On page 547, charged impurities in monolayer MoS 2 are effectively screened by combining a high‐κ dielectric substrate and a high density of carriers, leading to an unprecedented room‐temperature electron mobility of ≈150 cm 2 V −1 s −1 . Y. Shi, G. Zhang, X. Wang and co‐workers also demonstrate phonon‐limited transport in monolayer MoS 2 for the first time, an important milestone for electronic device applications.

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