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Multifunctional Organic‐Semiconductor Interfacial Layers for Solution‐Processed Oxide‐Semiconductor Thin‐Film Transistor
Author(s) -
Kwon Guhyun,
Kim Keetae,
Choi Byung Doo,
Roh Jeongkyun,
Lee Changhee,
Noh YongYoung,
Seo SungYong,
Kim MyungGil,
Kim Choongik
Publication year - 2017
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201607055
Subject(s) - materials science , passivation , thin film transistor , dopant , semiconductor , optoelectronics , organic semiconductor , doping , layer (electronics) , transistor , nanotechnology , voltage , electrical engineering , engineering
The stabilization and control of the electrical properties in solution‐processed amorphous‐oxide semiconductors (AOSs) is crucial for the realization of cost‐effective, high‐performance, large‐area electronics. In particular, impurity diffusion, electrical instability, and the lack of a general substitutional doping strategy for the active layer hinder the industrial implementation of copper electrodes and the fine tuning of the electrical parameters of AOS‐based thin‐film transistors (TFTs). In this study, the authors employ a multifunctional organic‐semiconductor (OSC) interlayer as a solution‐processed thin‐film passivation layer and a charge‐transfer dopant. As an electrically active impurity blocking layer, the OSC interlayer enhances the electrical stability of AOS TFTs by suppressing the adsorption of environmental gas species and copper‐ion diffusion. Moreover, charge transfer between the organic interlayer and the AOS allows the fine tuning of the electrical properties and the passivation of the electrical defects in the AOS TFTs. The development of a multifunctional solution‐processed organic interlayer enables the production of low‐cost, high‐performance oxide semiconductor‐based circuits.