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Indium‐Free Perovskite Solar Cells Enabled by Impermeable Tin‐Oxide Electron Extraction Layers
Author(s) -
Hu Ting,
Becker Tim,
Pourdavoud Neda,
Zhao Jie,
Brinkmann Kai Oliver,
Heiderhoff Ralf,
Gahlmann Tobias,
Huang Zengqi,
Olthof Selina,
Meerholz Klaus,
Többens Daniel,
Cheng Baochang,
Chen Yiwang,
Riedl Thomas
Publication year - 2017
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201606656
Subject(s) - materials science , indium tin oxide , perovskite (structure) , indium , tin , extraction (chemistry) , oxide , tin oxide , electron , free electron model , optoelectronics , engineering physics , nanotechnology , chemical engineering , inorganic chemistry , thin film , metallurgy , chemistry , engineering , physics , chromatography , quantum mechanics
Corrosive precursors used for the preparation of organic–inorganic hybrid perovskite photoactive layers prevent the application of ultrathin metal layers as semitransparent bottom electrodes in perovskite solar cells (PVSCs). This study introduces tin‐oxide (SnO x ) grown by atomic layer deposition (ALD), whose outstanding permeation barrier properties enable the design of an indium‐tin‐oxide (ITO)‐free semitransparent bottom electrode (SnO x /Ag or Cu/SnO x ), in which the metal is efficiently protected against corrosion. Simultaneously, SnO x functions as an electron extraction layer. We unravel the spontaneous formation of a PbI 2 interfacial layer between SnO x and the CH 3 NH 3 PbI 3 perovskite. An interface dipole between SnO x and this PbI 2 layer is found, which depends on the oxidant (water, ozone, or oxygen plasma) used for the ALD growth of SnO x . An electron extraction barrier between perovskite and PbI 2 is identified, which is the lowest in devices based on SnO x grown with ozone. The resulting PVSCs are hysteresis‐free with a stable power conversion efficiency (PCE) of 15.3% and a remarkably high open circuit voltage of 1.17 V. The ITO‐free analogues still achieve a high PCE of 11%.