Premium
Multi‐Nonvolatile State Resistive Switching Arising from Ferroelectricity and Oxygen Vacancy Migration
Author(s) -
Lü Weiming,
Li Changjian,
Zheng Limei,
Xiao Juanxiu,
Lin Weinan,
Li Qiang,
Wang Xiao Renshaw,
Huang Zhen,
Zeng Shengwei,
Han Kun,
Zhou Wenxiong,
Zeng Kaiyang,
Chen Jingsheng,
Cao Wenwu,
Venkatesan Thirumalai
Publication year - 2017
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201606165
Subject(s) - ferroelectricity , materials science , non volatile memory , resistive touchscreen , quantum tunnelling , resistive random access memory , optoelectronics , heterojunction , voltage , electrode , polarization (electrochemistry) , nanotechnology , condensed matter physics , electrical engineering , chemistry , physics , dielectric , engineering
Resistive switching phenomena form the basis of competing memory technologies. Among them, resistive switching, originating from oxygen vacancy migration (OVM), and ferroelectric switching offer two promising approaches. OVM in oxide films/heterostructures can exhibit high/low resistive state via conducting filament forming/deforming, while the resistive switching of ferroelectric tunnel junctions (FTJs) arises from barrier height or width variation while ferroelectric polarization reverses between asymmetric electrodes. Here the authors demonstrate a coexistence of OVM and ferroelectric induced resistive switching in a BaTiO 3 FTJ by comparing BaTiO 3 with SrTiO 3 based tunnel junctions. This coexistence results in two distinguishable loops with multi‐nonvolatile resistive states. The primary loop originates from the ferroelectric switching. The second loop emerges at a voltage close to the SrTiO 3 switching voltage, showing OVM being its origin. BaTiO 3 based devices with controlled oxygen vacancies enable us to combine the benefits of both OVM and ferroelectric tunneling to produce multistate nonvolatile memory devices.