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Modulation‐Doped In 2 O 3 /ZnO Heterojunction Transistors Processed from Solution
Author(s) -
Khim Dongyoon,
Lin YenHung,
Nam Sungho,
Faber Hendrik,
Tetzner Kornelius,
Li Ruipeng,
Zhang Qiang,
Li Jun,
Zhang Xixiang,
Anthopoulos Thomas D.
Publication year - 2017
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201605837
Subject(s) - materials science , heterojunction , doping , thin film transistor , optoelectronics , fermi level , amorphous solid , microstructure , electron mobility , layer (electronics) , transistor , electron , nanotechnology , voltage , crystallography , composite material , electrical engineering , chemistry , physics , engineering , quantum mechanics
This paper reports the controlled growth of atomically sharp In 2 O 3 /ZnO and In 2 O 3 /Li‐doped ZnO (In 2 O 3 /Li‐ZnO) heterojunctions via spin‐coating at 200 °C and assesses their application in n‐channel thin‐film transistors (TFTs). It is shown that addition of Li in ZnO leads to n‐type doping and allows for the accurate tuning of its Fermi energy. In the case of In 2 O 3 /ZnO heterojunctions, presence of the n‐doped ZnO layer results in an increased amount of electrons being transferred from its conduction band minimum to that of In 2 O 3 over the interface, in a process similar to modulation doping. Electrical characterization reveals the profound impact of the presence of the n‐doped ZnO layer on the charge transport properties of the isotype In 2 O 3 /Li‐ZnO heterojunctions as well as on the operating characteristics of the resulting TFTs. By judicious optimization of the In 2 O 3 /Li‐ZnO interface microstructure, and Li concentration, significant enhancement in both the electron mobility and TFT bias stability is demonstrated.