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Selective Growth of Metal‐Free Metallic and Semiconducting Single‐Wall Carbon Nanotubes
Author(s) -
Zhang Lili,
Sun DongMing,
Hou PengXiang,
Liu Chang,
Liu Tianyuan,
Wen Jianfeng,
Tang Nujiang,
Luan Jian,
Shi Chao,
Li JinCheng,
Cong HongTao,
Cheng HuiMing
Publication year - 2017
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201605719
Subject(s) - materials science , carbon nanotube , metal , catalysis , nanotechnology , impurity , chemical vapor deposition , chemical engineering , nanoparticle , silicon , electrode , oxide , optoelectronics , metallurgy , organic chemistry , chemistry , engineering
A major obstacle for the use of single‐wall carbon nanotubes (SWCNTs) in electronic devices is their mixture of different types of electrical conductivity that strongly depends on their helical structure. The existence of metal impurities as a residue of a metallic growth catalyst may also lower the performance of SWCNT‐based devices. Here, it is shown that by using silicon oxide (SiO x ) nanoparticles as a catalyst, metal‐free semiconducting and metallic SWCNTs can be selectively synthesized by the chemical vapor deposition of ethanol. It is found that control over the nanoparticle size and the content of oxygen in the SiO x catalyst plays a key role in the selective growth of SWCNTs. Furthermore, by using the as‐grown semiconducting and metallic SWCNTs as the channel material and source/drain electrodes, respectively, all‐SWCNT thin‐film transistors are fabricated to demonstrate the remarkable potential of these SWCNTs for electronic devices.