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High Speed Epitaxial Perovskite Memory on Flexible Substrates
Author(s) -
Bakaul Saidur R.,
Serrao Claudy R.,
Lee Oukjae,
Lu Zhongyuan,
Yadav Ajay,
Carraro Carlo,
Maboudian Roya,
Ramesh Ramamoorthy,
Salahuddin Sayeef
Publication year - 2017
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201605699
Subject(s) - materials science , perovskite (structure) , substrate (aquarium) , layer (electronics) , optoelectronics , ferroelectricity , epitaxy , non volatile memory , voltage , fast switching , charge (physics) , nanotechnology , electrical engineering , crystallography , dielectric , oceanography , chemistry , physics , engineering , quantum mechanics , geology
Single‐crystal perovskite ferroelectric material is integrated at room temperature on a flexible substrate by the layer transfer technique. Two terminal memory devices fabricated with these materials exhibit faster switching speed, lower operating voltage, and superior endurance than other existing flexible counterparts. The research provides an avenue toward combining the rich functionality of charge and spin states, offered by the general class of complex oxides, onto a flexible platform.