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Ultrahigh Mobility in Solution‐Processed Solid‐State Electrolyte‐Gated Transistors
Author(s) -
NketiaYawson Benjamin,
Kang SeokJu,
Tabi Grace Dansoa,
Perinot Andrea,
Caironi Mario,
Facchetti Antonio,
Noh YongYoung
Publication year - 2017
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201605685
Subject(s) - materials science , electrolyte , transistor , polarization (electrochemistry) , dielectric , capacitance , semiconductor , polymer , optoelectronics , solid state , insulator (electricity) , dipole , nanotechnology , engineering physics , electrical engineering , voltage , physics , electrode , chemistry , organic chemistry , composite material , engineering
A new concept of a high‐capacitance polymeric dielectric based on high‐ k polymer and ion gel blends is reported. This solid‐state electrolyte gate insulator enables remarkable field‐effect mobilities exceeding 10 cm 2 V −1 s −1 for common polymer and other semiconductor families at V G ≤ 2 V owing to high areal capacitance (>4 µF cm −2 ) from combined polarization of CF interface dipoles and electrical‐double‐layer formation.