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Hall Effect in Bulk‐Doped Organic Single Crystals
Author(s) -
Ohashi Chika,
Izawa Seiichiro,
Shinmura Yusuke,
Kikuchi Mitsuru,
Watase Seiji,
Izaki Masanobu,
Naito Hiroyoshi,
Hiramoto Masahiro
Publication year - 2017
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201605619
Subject(s) - rubrene , materials science , hall effect , single crystal , doping , organic semiconductor , analytical chemistry (journal) , electron mobility , condensed matter physics , electrical resistivity and conductivity , optoelectronics , crystallography , organic chemistry , chemistry , physics , electrical engineering , engineering
The standard technique to separately and simultaneously determine the carrier concentration per unit volume ( N , cm −3 ) and the mobility (μ) of doped inorganic single crystals is to measure the Hall effect. However, this technique has not been reported for bulk‐doped organic single crystals. Here, the Hall effect in bulk‐doped single‐crystal organic semiconductors is measured. A key feature of this work is the ultraslow co‐deposition technique, which reaches as low as 10 −9 nm s −1 and enables us to dope homoepitaxial organic single crystals with acceptors at extremely low concentrations of 1 ppm. Both the hole concentration per unit volume ( N , cm −3 ) and the Hall mobility (μ H ) of bulk‐doped rubrene single crystals, which have a band‐like nature, are systematically observed. It is found that these rubrene single crystals have (i) a high ionization rate and (ii) scattering effects because of lattice disturbances, which are peculiar to this organic single crystal.