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Electrical Performance of a Molecular Organic Semiconductor under Thermal Stress
Author(s) -
Seifrid Martin,
Ford Michael J.,
Li Mingqi,
Koh Kyoung Moo,
Trefonas Peter,
Bazan Guillermo C.
Publication year - 2017
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201605511
Subject(s) - ambipolar diffusion , materials science , hysteresis , organic semiconductor , semiconductor , stress (linguistics) , thermal hysteresis , optoelectronics , electron mobility , chemical physics , thermal , condensed matter physics , thermodynamics , electron , linguistics , philosophy , physics , quantum mechanics , phase transition
The high temperature performance of organic field‐effect transistors based on a molecular organic semiconductor with intermediate dimensions, namely X2, is evaluated. Hole mobility is stable, even at 200–250 °C. Changes in device characteristics at high temperature are reversible across multiple cycles of high temperature operation. Measurements at high temperature exhibit larger hysteresis, while at low temperature one observes the emergence of ambipolar transport.