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Designing Strained Interface Heterostructures for Memristive Devices
Author(s) -
Schweiger Sebastian,
Pfenninger Reto,
Bowman William J.,
Aschauer Ulrich,
Rupp Jennifer L. M.
Publication year - 2017
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201605049
Subject(s) - materials science , heterojunction , ionic bonding , interface (matter) , modulation (music) , strain (injury) , nanotechnology , optoelectronics , ion , composite material , medicine , philosophy , physics , quantum mechanics , capillary number , capillary action , aesthetics
Ionic heterostructures are used as a strain‐modulated memristive device based on the model system Gd 0.1 Ce 0.9 O 2− δ /Er 2 O 3 to set and tune the property of “memristance.” The modulation of interfacial strain and the interface count is used to engineer the R off / R on ratio and the persistence of the system. A model describing the variation of mixed ionic–electronic mobilities and defect concentrations is presented.