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Heterogeneous Defect Domains in Single‐Crystalline Hexagonal WS 2
Author(s) -
Jeong Hye Yun,
Jin Youngjo,
Yun Seok Joon,
Zhao Jiong,
Baik Jaeyoon,
Keum Dong Hoon,
Lee Hyun Seok,
Lee Young Hee
Publication year - 2017
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201605043
Subject(s) - vacancy defect , materials science , raman spectroscopy , photoluminescence , doping , domain (mathematical analysis) , monolayer , crystallography , hexagonal crystal system , condensed matter physics , nanotechnology , optoelectronics , physics , optics , chemistry , mathematical analysis , mathematics
Single‐crystalline monolayer hexagonal WS 2 is segmented into alternating triangular domains: sulfur‐vacancy (SV)‐rich and tungsten‐vacancy (WV)‐rich domains. The WV‐rich domain with deep‐trap states reveals an electron‐dedoping effect, and the electron mobility and photoluminescence are lower than those of the SV‐rich domain with shallow‐donor states by one order of magnitude. The vacancy‐induced strain and doping effects are investigated via Raman and scanning photoelectron microscopy.