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CuGaO 2 : A Promising Inorganic Hole‐Transporting Material for Highly Efficient and Stable Perovskite Solar Cells
Author(s) -
Zhang Hua,
Wang Huan,
Chen Wei,
Jen Alex K.Y.
Publication year - 2017
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201604984
Subject(s) - materials science , perovskite (structure) , semiconductor , energy conversion efficiency , optoelectronics , layer (electronics) , electron mobility , nanotechnology , chemical engineering , engineering
The p‐type inorganic semiconductor CuGaO 2 as a hole‐transporting layer (HTL) in perovskite solar cells (PSCs) provides higher carrier mobility, better‐energy level matching, and superior stability, as well as low‐temperature processing technique. Compared to organic HTL, a very competitive PCE of 18.51% with long‐term stability is achieved. This indicates that CuGaO 2 is a promising HTL for efficient and stable PSCs.