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Graphene Substrate for van der Waals Epitaxy of Layer‐Structured Bismuth Antimony Telluride Thermoelectric Film
Author(s) -
Kim Eun Sung,
Hwang JaeYeol,
Lee Kyu Hyoung,
Ohta Hiromichi,
Lee Young Hee,
Kim Sung Wng
Publication year - 2017
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201604899
Subject(s) - materials science , epitaxy , graphene , van der waals force , thermoelectric effect , substrate (aquarium) , bismuth telluride , thermoelectric materials , nanotechnology , optoelectronics , layer (electronics) , bismuth , composite material , chemistry , organic chemistry , thermodynamics , physics , thermal conductivity , metallurgy , oceanography , molecule , geology
Graphene as a substrate for the van der Waals epitaxy of 2D layered materials is utilized for the epitaxial growth of a layer‐structured thermoelectric film. Van der Waals epitaxial Bi 0.5 Sb 1.5 Te 3 film on graphene synthesized via a simple and scalable fabrication method exhibits good crystallinity and high thermoelectric transport properties comparable to single crystals.