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Reduction of Dislocations in Single Crystal Diamond by Lateral Growth over a Macroscopic Hole
Author(s) -
Tallaire Alexandre,
Brinza Ovidiu,
Mille Vianney,
William Ludovic,
Achard Jocelyn
Publication year - 2017
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201604823
Subject(s) - dislocation , diamond , materials science , chemical vapor deposition , substrate (aquarium) , crystallography , condensed matter physics , nanotechnology , engineering physics , composite material , physics , geology , chemistry , oceanography
A low‐dislocation diamond is obtained by homoepitaxial chemical vapor deposition on a standard moderate‐quality substrate hollowed out by a large square hole. Dislocations are found to propagate vertically and horizontally from the substrate and to terminate at the top surface or at the sides of the hole, thus leaving the central part with a strongly reduced dislocation density.