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High Open‐Circuit Voltages in Tin‐Rich Low‐Bandgap Perovskite‐Based Planar Heterojunction Photovoltaics
Author(s) -
Zhao Baodan,
AbdiJalebi Mojtaba,
Tabachnyk Maxim,
Glass Hugh,
Kamboj Varun S.,
Nie Wanyi,
Pearson Andrew J.,
Puttisong Yuttapoom,
Gödel Karl C.,
Beere Harvey E.,
Ritchie David A.,
Mohite Aditya D.,
Dutton Siân E.,
Friend Richard H.,
Sadhanala Aditya
Publication year - 2017
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201604744
Subject(s) - materials science , photovoltaics , heterojunction , band gap , optoelectronics , planar , perovskite (structure) , photovoltaic system , open circuit voltage , energy conversion efficiency , thin film , voltage , nanotechnology , electrical engineering , chemical engineering , computer graphics (images) , computer science , engineering
Low‐bandgap CH 3 NH 3 (Pb x Sn 1– x )I 3 (0 ≤ x ≤ 1) hybrid perovskites (e.g., ≈1.5–1.1 eV) demonstrating high surface coverage and superior optoelectronic properties are fabricated. State‐of‐the‐art photovoltaic (PV) performance is reported with power conversion efficiencies approaching 10% in planar heterojunction architecture with small (<450 meV) energy loss compared to the bandgap and high (>100 cm 2 V −1 s −1 ) intrinsic carrier mobilities.