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SWCNT‐MoS 2 ‐SWCNT Vertical Point Heterostructures
Author(s) -
Zhang Jin,
Wei Yang,
Yao Fengrui,
Li Dongqi,
Ma He,
Lei Peng,
Fang Hehai,
Xiao Xiaoyang,
Lu Zhixing,
Yang Juehan,
Li Jingbo,
Jiao Liying,
Hu Weida,
Liu Kaihui,
Liu Kai,
Liu Peng,
Li Qunqing,
Lu Wei,
Fan Shoushan,
Jiang Kaili
Publication year - 2017
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201604469
Subject(s) - nanoelectronics , heterojunction , materials science , transistor , point (geometry) , carbon nanotube , nanotechnology , field effect transistor , field (mathematics) , optoelectronics , graphene , electrical engineering , engineering , voltage , geometry , mathematics , pure mathematics
A vertical point heterostructure (VPH) is constructed by sandwiching a two‐dimensional (2D) MoS 2 flake with two cross‐stacked metallic single‐walled carbon nanotubes. It can be used as a field‐effect transistor with high on/off ratio and a light detector with high spatial resolution. Moreover, the hybrid 1D–2D–1D VPHs open up new possibilities for nanoelectronics and nano‐optoelectronics.