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Reversible Formation of 2D Electron Gas at the LaFeO 3 /SrTiO 3 Interface via Control of Oxygen Vacancies
Author(s) -
Xu Pengfa,
Han Wei,
Rice Philip M.,
Jeong Jaewoo,
Samant Mahesh G.,
Mohseni Katayoon,
Meyerheim Holger L.,
Ostanin Sergey,
Maznichenko Igor V.,
Mertig Ingrid,
Gross Eberhard K. U.,
Ernst Arthur,
Parkin Stuart S. P.
Publication year - 2017
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201604447
Subject(s) - epitaxy , interface (matter) , materials science , oxygen , electron , ionic bonding , nanotechnology , ion , layer (electronics) , physics , quantum mechanics , capillary number , capillary action , composite material
A conducting 2D electron gas (2DEG) is formed at the interface between epitaxial LaFeO 3 layers >3 unit cells thick and the surface of SrTiO 3 single crystals. The 2DEG is exquisitely sensitive to cation intermixing and oxygen nonstoichiometry. It is shown that the latter thus allows the controllable formation of the 2DEG via ionic liquid gating, thereby forming a nonvolatile switch.