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Near‐Infrared Electrophosphorescence up to 1.1 µm using a Thermally Activated Delayed Fluorescence Molecule as Triplet Sensitizer
Author(s) -
Nagata Ryo,
Nakanotani Hajime,
Adachi Chihaya
Publication year - 2017
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201604265
Subject(s) - materials science , electroluminescence , fluorescence , common emitter , optoelectronics , quantum efficiency , photochemistry , layer (electronics) , nanotechnology , optics , chemistry , physics
A tenfold improvement in the external electroluminescence quantum efficiency of NIR electrophosphorescence is demonstrated compared to devices with conventional fluorescent materials as host, by applying the concept of thermally activated delayed fluorescence to achieve an emitter layer capable of efficient spin conversion. This device architecture can maximize the performance of an organic‐semiconductor‐based NIR light source.