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High‐Electron‐Mobility and Air‐Stable 2D Layered PtSe 2 FETs
Author(s) -
Zhao Yuda,
Qiao Jingsi,
Yu Zhihao,
Yu Peng,
Xu Kang,
Lau Shu Ping,
Zhou Wu,
Liu Zheng,
Wang Xinran,
Ji Wei,
Chai Yang
Publication year - 2017
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201604230
Subject(s) - materials science , electron mobility , semiconductor , semimetal , density functional theory , electron , optoelectronics , infrared , nanotechnology , chemical physics , band gap , computational chemistry , optics , physics , quantum mechanics , chemistry
The electrical and optical measurements, in combination with density functional theory calculations, show distinct layer‐dependent semiconductor‐to‐semimetal evolution of 2D layered PtSe 2 . The high room‐temperature electron mobility and near‐infrared photoresponse, together with much better air‐stability, make PtSe 2 a versatile electronic 2D layered material.
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