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Metal–Semiconductor Phase‐Transition in WSe 2(1‐ x ) Te 2 x Monolayer
Author(s) -
Yu Peng,
Lin Junhao,
Sun Linfeng,
Le Quang Luan,
Yu Xuechao,
Gao Guanhui,
Hsu ChuangHan,
Wu Di,
Chang TayRong,
Zeng Qingsheng,
Liu Fucai,
Wang Qi Jie,
Jeng HorngTay,
Lin Hsin,
Trampert Achim,
Shen Zexiang,
Suenaga Kazu,
Liu Zheng
Publication year - 2017
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201603991
Subject(s) - monolayer , semiconductor , materials science , transition metal , ternary operation , phase (matter) , compound semiconductor , phase transition , nanotechnology , crystallography , optoelectronics , condensed matter physics , computer science , physics , chemistry , layer (electronics) , epitaxy , biochemistry , quantum mechanics , programming language , catalysis
A metal‐semiconductor phase transition in a ternary transition metal dichalcogenide (TMD) monolayer is achieved by alloying Te into WSe 2 (WSe 2(1− x ) Te 2 x , where x = 0%–100%). The optical bandgaps of the WSe 2(1− x ) Te 2x monolayer can be tuned from 1.67 to 1.44 eV (2H semiconductor) and drops to 0 eV (1Td metal), which opens up an exciting opportunity in functional electronic/optoelectronic devices.