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Detecting 100 fW cm −2 Light with Trapped Electron Gated Organic Phototransistors
Author(s) -
Zhang Yang,
Yuan Yongbo,
Huang Jinsong
Publication year - 2017
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201603969
Subject(s) - responsivity , materials science , photodetector , photodiode , ultraviolet , optoelectronics , sensitivity (control systems) , electron , optics , physics , electronic engineering , engineering , quantum mechanics
Ultraweak light detection with solid‐state and cooling‐free photodetectors is important for both fundamental research and practical applications. A general phototransistor architecture for detecting ultraviolet–visible light down to 100 fW cm −2 at room temperature is demonstrated. The exceptional sensitivity stems from an amplification process triggered by incident light. A responsivity of ≈10 7 A W −1 is achieved.