Detecting 100 fW cm −2  Light with Trapped Electron Gated Organic Phototransistors | Zendy

Zhang Yang | Zendy; Yuan Yongbo | Zendy; Huang Jinsong | Zendy

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Detecting 100 fW cm −2 Light with Trapped Electron Gated Organic Phototransistors

Author(s) -

Zhang Yang,

Yuan Yongbo,

Huang Jinsong

Publication year - 2017

Publication title -

advanced materials

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 10.707

H-Index - 527

eISSN - 1521-4095

pISSN - 0935-9648

DOI - 10.1002/adma.201603969

Subject(s) - responsivity , materials science , photodetector , photodiode , ultraviolet , optoelectronics , sensitivity (control systems) , electron , optics , physics , electronic engineering , engineering , quantum mechanics

Ultraweak light detection with solid‐state and cooling‐free photodetectors is important for both fundamental research and practical applications. A general phototransistor architecture for detecting ultraviolet–visible light down to 100 fW cm −2 at room temperature is demonstrated. The exceptional sensitivity stems from an amplification process triggered by incident light. A responsivity of ≈10 7 A W −1 is achieved.

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