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Epitaxially Self‐Assembled Alkane Layers for Graphene Electronics
Author(s) -
Yu YoungJun,
Lee GwanHyoung,
Choi Ji Il,
Shim Yoon Su,
Lee ChulHo,
Kang Seok Ju,
Lee Sunwoo,
Rim Kwang Taeg,
Flynn George W.,
Hone James,
Kim YongHoon,
Kim Philip,
Nuckolls Colin,
Ahn Seokhoon
Publication year - 2017
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201603925
Subject(s) - graphene , materials science , alkane , epitaxy , nanotechnology , graphene nanoribbons , doping , graphene oxide paper , self assembly , chemical engineering , optoelectronics , organic chemistry , catalysis , layer (electronics) , chemistry , engineering
The epitaxially grown alkane layers on graphene are prepared by a simple drop‐casting method and greatly reduce the environmentally driven doping and charge impurities in graphene. Multiscale simulation studies show that this enhancement of charge homogeneity in graphene originates from the lifting of graphene from the SiO 2 surface toward the well‐ordered and rigid alkane self‐assembled layers.