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50‐Fold EQE Improvement up to 6.27% of Solution‐Processed All‐Inorganic Perovskite CsPbBr 3 QLEDs via Surface Ligand Density Control
Author(s) -
Li Jianhai,
Xu Leimeng,
Wang Tao,
Song Jizhong,
Chen Jiawei,
Xue Jie,
Dong Yuhui,
Cai Bo,
Shan Qingsong,
Han Boning,
Zeng Haibo
Publication year - 2017
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201603885
Subject(s) - passivation , photoluminescence , materials science , light emitting diode , quantum efficiency , perovskite (structure) , quantum dot , diode , ligand (biochemistry) , optoelectronics , hexane , chemical engineering , nanotechnology , chromatography , chemistry , layer (electronics) , receptor , biochemistry , engineering
Solution‐processed CsPbBr 3 quantum‐dot light‐emitting diodes with a 50‐fold external quantum efficiency improvement (up to 6.27%) are achieved through balancing surface passivation and carrier injection via ligand density control (treating with hexane/ethyl acetate mixed solvent), which induces the coexistence of high levels of ink stability, photoluminescence quantum yields, thin‐film uniformity, and carrier‐injection efficiency.