Multibit MoS 2  Photoelectronic Memory with Ultrahigh Sensitivity | Zendy

Lee Dain | Zendy; Hwang Euyheon | Zendy; Lee Youngbin | Zendy; Choi Yongsuk | Zendy; Kim Jong Su | Zendy; Lee Seungwoo | Zendy; Cho Jeong Ho | Zendy

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Multibit MoS 2 Photoelectronic Memory with Ultrahigh Sensitivity

Author(s) -

Lee Dain,

Hwang Euyheon,

Lee Youngbin,

Choi Yongsuk,

Kim Jong Su,

Lee Seungwoo,

Cho Jeong Ho

Publication year - 2016

Publication title -

advanced materials

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 10.707

H-Index - 527

eISSN - 1521-4095

pISSN - 0935-9648

DOI - 10.1002/adma.201603571

Subject(s) - materials science , non volatile memory , optoelectronics , data retention , sensitivity (control systems) , computer data storage , retention time , nanotechnology , electronic engineering , computer science , computer hardware , engineering , chemistry , chromatography

A novel multibit MoS 2 photoelectronic nonvolatile memory device is developed by synergistically combining rational device designs and the efficient transfer of large‐area MoS 2 flakes. The MoS 2 photoelectronic memory exhibits excellent memory characteristics, including a large programming/erasing current ratio that exceeds 10 7 , multilevel data storage of 3 bits (corresponding to eight levels), performance stability over 200 cycles, and stable data retention over 10 4 s.

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