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Multibit MoS 2 Photoelectronic Memory with Ultrahigh Sensitivity
Author(s) -
Lee Dain,
Hwang Euyheon,
Lee Youngbin,
Choi Yongsuk,
Kim Jong Su,
Lee Seungwoo,
Cho Jeong Ho
Publication year - 2016
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201603571
Subject(s) - materials science , non volatile memory , optoelectronics , data retention , sensitivity (control systems) , computer data storage , retention time , nanotechnology , electronic engineering , computer science , computer hardware , engineering , chemistry , chromatography
A novel multibit MoS 2 photoelectronic nonvolatile memory device is developed by synergistically combining rational device designs and the efficient transfer of large‐area MoS 2 flakes. The MoS 2 photoelectronic memory exhibits excellent memory characteristics, including a large programming/erasing current ratio that exceeds 10 7 , multilevel data storage of 3 bits (corresponding to eight levels), performance stability over 200 cycles, and stable data retention over 10 4 s.