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Achieving Uniform Monolayer Transition Metal Dichalcogenides Film on Silicon Wafer via Silanization Treatment: A Typical Study on WS 2
Author(s) -
Chen Ying,
Gan Lin,
Li Huiqiao,
Ma Ying,
Zhai Tianyou
Publication year - 2017
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201603550
Subject(s) - silanization , monolayer , materials science , wafer , transition metal , silicon , fabrication , nanotechnology , metal , optoelectronics , chemical engineering , catalysis , composite material , metallurgy , organic chemistry , medicine , chemistry , alternative medicine , pathology , engineering
A silanization reaction is employed to improve the dispersion of precursors on a silicon wafer for a large‐size uniform transition metal dichalcogenide (TMD) film synthesis and to achieve a highly crystalline monolayer WS 2 film up to 1 cm 2 . The novel strategy is also verified for the synthesis of WSe 2 and MoS 2 uniform films, suggesting universality for TMD film fabrication.