Achieving Uniform Monolayer Transition Metal Dichalcogenides Film on Silicon Wafer via Silanization Treatment: A Typical Study on WS 2 | Zendy

Chen Ying | Zendy; Gan Lin | Zendy; Li Huiqiao | Zendy; Ma Ying | Zendy; Zhai Tianyou | Zendy

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Achieving Uniform Monolayer Transition Metal Dichalcogenides Film on Silicon Wafer via Silanization Treatment: A Typical Study on WS 2

Author(s) -

Chen Ying,

Gan Lin,

Li Huiqiao,

Ma Ying,

Zhai Tianyou

Publication year - 2017

Publication title -

advanced materials

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 10.707

H-Index - 527

eISSN - 1521-4095

pISSN - 0935-9648

DOI - 10.1002/adma.201603550

Subject(s) - silanization , monolayer , materials science , wafer , transition metal , silicon , fabrication , nanotechnology , metal , optoelectronics , chemical engineering , catalysis , composite material , metallurgy , organic chemistry , medicine , chemistry , alternative medicine , pathology , engineering

A silanization reaction is employed to improve the dispersion of precursors on a silicon wafer for a large‐size uniform transition metal dichalcogenide (TMD) film synthesis and to achieve a highly crystalline monolayer WS 2 film up to 1 cm 2 . The novel strategy is also verified for the synthesis of WSe 2 and MoS 2 uniform films, suggesting universality for TMD film fabrication.

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