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Inorganic Double Helices in Semiconducting SnIP
Author(s) -
Pfister Daniela,
Schäfer Konrad,
Ott Claudia,
Gerke Birgit,
Pöttgen Rainer,
Janka Oliver,
Baumgartner Maximilian,
Efimova Anastasia,
Hohmann Andrea,
Schmidt Peer,
Venkatachalam Sabarinathan,
van Wüllen Leo,
Schürmann Ulrich,
Kienle Lorenz,
Duppel Viola,
Parzinger Eric,
Miller Bastian,
Becker Jonathan,
Holleitner Alexander,
Weihrich Richard,
Nilges Tom
Publication year - 2016
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201603135
Subject(s) - materials science , flexibility (engineering) , semiconductor , nanorod , nanotechnology , crystallography , optoelectronics , chemistry , statistics , mathematics
SnIP is the first atomic‐scale double helical semiconductor featuring a 1.86 eV bandgap, high structural and mechanical flexibility, and reasonable thermal stability up to 600 K. It is accessible on a gram scale and consists of a racemic mixture of right‐ and left‐handed double helices composed by [SnI] and [P] helices. SnIP nanorods <20 nm in diameter can be accessed mechanically and chemically within minutes.