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Solution‐Processed Organic–Inorganic Perovskite Field‐Effect Transistors with High Hole Mobilities
Author(s) -
Matsushima Toshinori,
Hwang Sunbin,
Sandanayaka Atula S. D.,
Qin Chuanjiang,
Terakawa Shinobu,
Fujihara Takashi,
Yahiro Masayuki,
Adachi Chihaya
Publication year - 2016
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201603126
Subject(s) - materials science , perovskite (structure) , hysteresis , crystallite , electron mobility , field effect transistor , semiconductor , optoelectronics , transistor , organic semiconductor , chemical engineering , condensed matter physics , electrical engineering , metallurgy , physics , voltage , engineering
A very high hole mobility of 15 cm 2 V −1 s −1 along with negligible hysteresis are demonstrated in transistors with an organic–inorganic perovskite semiconductor. This high mobility results from the well‐developed perovskite crystallites, improved conversion to perovskite, reduced hole trap density, and improved hole injection by employing a top‐contact/top‐gate structure with surface treatment and MoO x hole‐injection layers.