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Mass Production of Nanogap Electrodes toward Robust Resistive Random Access Memory
Author(s) -
Cui Ajuan,
Liu Zhe,
Dong Huanli,
Yang Fangxu,
Zhen Yonggang,
Li Wuxia,
Li Junjie,
Gu Changzhi,
Zhang Xiaotao,
Li Rongjin,
Hu Wenping
Publication year - 2016
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201603124
Subject(s) - materials science , resistive random access memory , electrode , non volatile memory , resistive touchscreen , layer (electronics) , nanotechnology , electrical conductor , dissolution , optoelectronics , atomic layer deposition , deposition (geology) , etching (microfabrication) , chemical vapor deposition , chemical engineering , composite material , electrical engineering , paleontology , chemistry , sediment , biology , engineering
Nanogap electrodes arrays are fabricated by combining atomic layer deposition, adhesive tape, and chemical etching. A unipolar nonvolatile resistive‐switching behavior is identified in the nanogap electrodes, showing stable, robust performance and the multibit storage ability, demonstrating great potential in ultrahigh‐density storage. The formation and dissolution of Si conductive filaments and migration of Au atoms is the mechanism behind the resistive switching.